Package board having internal terminal interconnection and semiconductor package employing the same

ABSTRACT

A package board is provided. The package board includes a board body having a front surface and a back surface. A first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad are disposed on the front surface of the board body, and a second power pad, a second ground pad and a second signal pad are disposed on the back surface of the board body. The second power pad, the second ground pad and the second signal pad are electrically connected to the first power pad, the first ground pad and the first signal pad, respectively. An internal terminal interconnection is provided in a bulk region of the board body or on a surface of the board body. The internal terminal interconnection electrically connects the first internal terminal pad to the second internal terminal pad. A semiconductor package employing the package board is also provided.

CROSS-REFERENCE TO RELATED APPLICATIONCROSS REFERENCE

This application claims priority from Korean Patent Application No.2006-5803, filed Jan. 19, 2006, the disclosure of which is herebyincorporated herein by reference in its entirety as if set forth fullyherein.This application is a reissue of U.S. Pat. No. 7,745,922 issuedon, Jun. 29, 2010, which claims priority from Korean Patent ApplicationNo. 2006-0005803, filed Jan. 19, 2006, the contents of which are hereinincorporated by reference in their entirety.

TECHNICAL FIELD

This disclosure relates to a package board and a semiconductor packageemploying the same and, more particularly, to a package board having aninternal terminal interconnection and a semiconductor package employingthe same.

BACKGROUND

A semiconductor device includes internal circuits that perform variousfunctions using an external power voltage. The internal circuits mayinclude some circuits, for example. high voltage circuits which use adifferent voltage from the external power voltage as an internal powervoltage. The internal power voltage, i.e., a high voltage, for drivingthe high voltage circuits may be generated from a high voltage generatorwhich is one of the internal circuits. In this case, chip level internalinterconnections may be provided in the semiconductor device in order toelectrically connect an output terminal of the high voltage generator toa power terminal of the high voltage circuits.

As the semiconductor device becomes more highly integrated, the pitch ofthe chip level internal interconnections has been reduced. Thus, theremay be a limitation in stably supplying the internal power voltage tothe high voltage circuit using only the chip level internalinterconnections.

In addition, the semiconductor device may include so-called“redistributed” metal interconnections. The redistributed metalinterconnections are provided to electrically connect chip pads, whichare electrically connected with the internal circuits, to bonding pads.Effectively, the redistributed metal interconnections spatiallyredistribute, or reconfigure, the chip pads' first distribution of padplacements into a second distribution, or redistribution, havingdifferent, and generally more desirable, pad placements. The bondingpads correspond to pads which are in direct contact with solder bumps orbonding wires for package. Thus, by the “redistribution” of distributedchip pads to corresponding “redistributed” bonding pads, theredistributed bonding pads can be disposed at desired positionsregardless of the positions or placements of the chip pads in theoriginal distribution.

A semiconductor chip having the redistributed metal interconnections istaught in U.S. Pat. No. 6,211,576 B1 to Shimizu, et al., entitled“Semiconductor Device.” According to Shimizu, et al., a power wiringsection, a ground wiring section and a signal wiring section areprovided at a same level, and the power wiring section or the groundwiring section is formed adjacent to both sides of at least a portion ofthe signal wiring section.

SUMMARY

In one embodiment, the present invention provides a package board thatis suitable for improving internal power delivery efficiency and/orinternal signal delivery efficiency between internal circuits in asemiconductor chip.

In another embodiment, the present invention also provides asemiconductor package employing a package board that is suitable forimproving internal power delivery efficiency and/or internal signaldelivery efficiency between internal circuits in a semiconductor chip.

According to an aspect of the present invention, the package boardcomprises a board body having a front surface and a back surface. Afirst power pad, a first ground pad, a first signal pad, a firstinternal terminal pad and a second internal terminal pad are provided onthe front surface of the board body, and a second power pad, a secondground pad and a second signal pad are provided on the back surface ofthe board body. The second power pad, the second ground pad and thesecond signal pad are electrically connected to the first power pad, thefirst ground pad and the first signal pad, respectively. An internalterminal interconnection is provided in a bulk region of the board bodyor on a surface of the board body. The internal terminal interconnectionelectrically connects the first internal terminal pad to the secondinternal terminal pad.

In some embodiments of the present invention, the package board mayfurther include a common power interconnection which is disposed in thebulk region of the board body or on the surface of the board body andelectrically connected to the first and second power pads. The internalterminal interconnection may be disposed across the common powerinterconnection and electrically insulated from the common powerinterconnection.

In other embodiments, the package board may further include a commonground interconnection which is disposed in the bulk region of the boardbody or on the surface of the board body and electrically connected tothe first and second ground pads. The internal terminal interconnectionmay be disposed across the common ground interconnection andelectrically insulated from the common ground interconnection.

In still other embodiments, the first power pad, the first ground padand the first signal pad may be electrically connected to the secondpower pad, the second ground pad and the second signal pad through firstto third holes penetrating the board body, respectively.

According to another aspect of the present invention, the semiconductorpackage comprises a board body having a front surface and a backsurface, and a semiconductor chip mounted on the front surface of theboard body. A first power pad, a first ground pad, a first signal pad, afirst internal terminal pad and a second internal terminal pad areprovided on the front surface of the board body, and a second power pad,a second ground pad and a second signal pad are provided on the backsurface of the board body. The second power pad, the second ground padand the second signal pad are electrically connected to the first powerpad, the first ground pad and the first signal pad, respectively. Aninternal terminal interconnection is formed in a bulk region of theboard body or on a surface of the board body. The internal terminalinterconnection electrically connects the first internal terminal pad tothe second internal terminal pad. The semiconductor chip has an externalpower bonding pad, an external ground bonding pad, an external signalbonding pad, a first internal bonding pad and a second internal bondingpad. The first power pad, the first ground pad, the first signal pad,the first internal terminal pad and the second internal terminal pad areelectrically connected to the external power bonding pad, the externalground bonding pad, the external signal bonding pad, the first internalbonding pad and the second internal bonding pad through an externalpower connector, an external ground connector, an external signalconnector, a first internal connector and a second internal connector,respectively.

In some embodiments of the present invention, the semiconductor packagemay further include a common power interconnection which is disposed inthe bulk region of the board body or on the surface of the board bodyand electrically connected to the first and second power pads.

In other embodiments, the semiconductor package may further include acommon ground interconnection which is disposed in the bulk region ofthe board body or on the surface of the board body and electricallyconnected to the first and second ground pads.

In still other embodiments, the first power pad, the first ground padand the first signal pad may be electrically connected to the secondpower pad, the second ground pad and the second signal pad through firstto third holes penetrating the board body, respectively.

In yet other embodiments, the semiconductor package may further includea power ball, a ground ball and a signal ball that are in contact withthe second power pad, the second ground pad and the second signal pad,respectively.

In yet still other embodiments, the first internal bonding pad may beelectrically connected to an output terminal of an internal powergenerator of the semiconductor chip, and the second internal bonding padmay be electrically connected to a power terminal of any one of internalcircuits of the semiconductor chip.

In further embodiments, the semiconductor chip may be a flip chip. Inthis case, the external power connector, the external ground connector,the external signal connector, the first internal connector and thesecond internal connector may be flip chip bumps.

In still further embodiments, the semiconductor chip may include asemiconductor substrate; internal circuits formed on the semiconductorsubstrate; an insulating layer covering the internal circuits and thesemiconductor substrate; chip pads formed on the insulating layer andelectrically connected to the internal circuits; a dielectric layercovering the insulating layer and the chip pads; and a power line, aground line, a signal line, a first interconnection and a secondinterconnection redistributed on the dielectric layer. The chip pads mayinclude an external power chip pad, an external ground chip pad, anexternal signal chip pad, a first internal chip pad and a secondinternal chip pad. The redistributed power line, the redistributedground line, the redistributed signal line, the first interconnectionand the second interconnection may be electrically connected to theexternal power chip pad, the external ground chip pad, the externalsignal chip pad, the first internal chip pad and the second internalchip pad, respectively. A portion of the redistributed power line, aportion of the redistributed ground line, a portion of the redistributedsignal line, a portion of the first interconnection and a portion of thesecond interconnection may act as the external power bonding pad, theexternal ground bonding pad, the external signal bonding pad, the firstinternal bonding pad and the second internal bonding pad, respectively.An internal interconnection may be disposed on or in the insulatinglayer. The internal interconnection may electrically connect the firstinternal chip pad to the second internal chip pad. The internal circuitsmay constitute a DRAM circuit. The DRAM circuit may include a well biascircuit, a high voltage generator and a plate electrode voltagegenerator. One of the first internal chip pad and the second internalchip pad may be electrically connected to an output terminal of any oneof the well bias circuit, the high voltage generator and the plateelectrode voltage generator.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a schematic block diagram illustrating a DRAM chip employed ina semiconductor package according to an embodiment of the presentinvention and internal terminal interconnections connected to the DRAMchip; and

FIG. 2 is a cross-sectional view illustrating a semiconductor packageaccording to an embodiment of the present invention.

DETAILED DESCRIPTION

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. Likenumbers refer to like elements throughout the specification.

FIG. 1 is a schematic block diagram illustrating a DRAM chip employed ina semiconductor package according to an embodiment of the presentinvention and internal terminal interconnections connected to the DRAMchip, and FIG. 2 is a cross-sectional view illustrating a DRAM packageincluding the DRAM chip and the internal terminal interconnections ofFIG. 1. However, the present invention is not limited to the DRAMpackage but may be applied to all semiconductor packages including aninternal circuit which uses a different voltage from an external powervoltage as an internal power voltage. For example, some embodiments ofthe present invention may be applicable to a package of a flash memorydevice including a high voltage generator and a high voltage circuit.The present invention may also be applied to all semiconductor packageshaving internal signal interconnections which electrically connectinternal circuits with each other.

Referring to FIGS. 1 and 2, a DRAM chip 100 includes a plurality of chippads. The chip pads can include an external power chip pad 55PP, anexternal ground chip pad 55GG, external signal chip pads, first internalchip pads and second internal chip pads. The external signal chip padscan include n input signal chip pads CPI1, . . . , CPIn and m outputsignal chip pads CPO1, . . . , CPOm.

The DRAM chip 100 can further include a plurality of internal circuits.For example, the DRAM chip 100 can include a cell array block CA havinga plurality of DRAM cells, a decoder DEC for generating address signalsto select at least one of the DRAM cells, and sense amplifiers SA1, . .. , SAm having first input terminals electrically connected to theselected DRAM cells. Each of the sense amplifiers SA1, . . . , SAm has asecond input terminal to which a reference signal Φref is applied. Thedecoder DEC has a power terminal Vcc electrically connected to theexternal power chip pad 55PP and a ground terminal Vss electricallyconnected to the external ground chip pad 55GG. The input signal chippads CPI1, . . . , CPIn are electrically connected to input terminals ofthe decoder DEC, respectively. The output signal chip pads CPO1, . . . ,CPOm are electrically connected to output terminals of the senseamplifiers SA1, . . . , SAm, respectively.

The DRAM chip 100 can further include additional internal circuits suchas first, second and third internal power generators IPG1, IPG2 and IPG3as well as a high voltage circuit HVC. Each of the first, second andthird internal power generators IPG1, IPG2 and IPG3 also has a powerterminal Vcc electrically connected to the external power chip pad 55PPand a ground terminal Vss electrically connected to the external groundchip pad 55GG. The first, second and third internal power generatorsIPG1, IPG2 and IPG3 have first, second and third output terminals IP1,IP2 and IP3, respectively. The first internal power generator IPG1outputs a first internal power voltage, which is applied to a plateelectrode PE of the cell array block CA, through the first outputterminal IP1. The second internal power generator IPG2 outputs a secondinternal power voltage, which is applied to a well region W of the cellarray block CA, through the second output terminal IP2. The thirdinternal power generator IPG3 outputs a third internal power voltage,which is applied to a power terminal Vpp of the high voltage circuitHVC, through the third output terminal IP3. Thus, the first, second andthird internal power generators IPG1, IPG2 and IPG3 can correspond to aplate electrode voltage generator, a well bias circuit and a highvoltage generator, respectively.

When the external power voltage applied to the power terminals Vcc isdenoted by “V_(DD)”, the first internal power voltage may be a halfvoltage of the external power voltage V_(DD). Further, the secondinternal power voltage may be a negative voltage corresponding to a backgate bias of cell transistors in the cell array block CA. The thirdinternal power voltage may be a positive high voltage which is greaterthan the external power voltage V_(DD). Finally, the high voltagecircuit HVC may be a high voltage logic circuit for converting a highvoltage input signal Φi to a high voltage output signal Φo. Thesevoltages are nominal and depend upon a particular application.Accordingly, any suitable voltages are contemplated as being within thespirit and scope of the invention.

The internal circuits such as the decoder DEC, the cell array block CA,the sense amplifiers SA1, . . . , SAm, the first through third internalpower generators IPG1, . . . , IPG3 and the high voltage circuit HVC canbe provided in or on the semiconductor substrate 51 of FIG. 2. A mainsurface 51s of the substrate having the internal circuits can be coveredwith an insulating layer 53.

The external power chip pad 55PP, the external ground chip pad 55GG andthe external signal chip pads CPI1, . . . , CPIn and CPO1, . . . , CPOm(See 55SS of FIG. 2) are disposed on the insulating layer 53. Inaddition, first internal chip pads ICP1′, ICP2′ and ICP3′ (See 55i′ ofFIG. 2) and second internal chip pads ICP1″, ICP2″ and ICP3″ (See 55i″of FIG. 2) are disposed on the insulating layer 53. The first internalchip pads ICP1′, ICP2′ and ICP3′ are electrically connected to thefirst, second and third output terminals IP1, IP2 and IP3, respectively.The second internal chip pads ICP1″, ICP2″ and ICP3″ are electricallyconnected to the plate electrode PE, the well region W and the highvoltage power terminal Vpp, respectively.

The first output terminal IP1 is electrically connected to the plateelectrode PE through a first internal interconnection IL1 disposed inthe insulating layer 53 or on the insulating layer 53. The second outputterminal IP2 is electrically connected to the well region W through asecond internal interconnection IL2 disposed in the insulating layer 53or on the insulating layer 53. Further, the third output terminal IP3 iselectrically connected to the high voltage power terminal Vpp through athird internal interconnection IL3 disposed in the insulating layer 53or on the insulating layer 53. Those of skill in the art will appreciatethat alternative suitable connections are within the spirit and scope ofthe invention.

The pitch size of the first, second and third internal interconnectionsIL1, IL2 and IL3 typically are subject to a design rule of the DRAM chip100. Typically, the greater the integration density of the DRAM chip100, the smaller the pitch size of the first, second and third internalinterconnections IL1, IL2 and IL3. In other words, as the DRAM chip 100becomes more highly integrated, electrical resistance of the internalinterconnections IL1, IL2 and IL3 tends to increase, which, in turn,limits chip performance parameters such as access time and cycle time oreven data read/write accuracy and reliability. Accordingly, there can bean undesirable limitation in attempting to improve delivery efficiencyof internal power voltages of a highly integrated DRAM chip using thefirst, second and third internal interconnections IL1, IL2 and IL3.

It is this limitation and other problems that some embodiments of thepresent invention address. It will be seen that the invention suppliesan additional and more robust connection between first and secondinternal terminal pads by disposing in or on a board body a thickerinterconnect plane having higher pitched connection pads thateffectively multiples the current carrying capacity (i.e., divides theresistance) of the conventional internal interconnections IL1, IL2 andIL3. Signal, power and ground electrical characteristics all similarlycan be fortified in accordance with an embodiment of the invention.Those of skill in the art will appreciate that the power and groundinterconnections preferably extend broadly in two dimensions across theplane of the board body like electrical shields, irrespective of whichis disposed above and which is disposed below the internal terminalinterconnection.

The chip pads 55PP, 55GG, 55SS, 55i′ and 55i″ and the insulating layer53 are covered with a passivation layer 57. The passivation layer 57 caninclude a silicon nitride layer. The passivation layer 57 can be coveredwith a first dielectric layer 59. The first dielectric layer 59 may be asilicon oxide layer or a polyimide layer. In accordance with someembodiments of the invention, a redistributed power line 61PL, aredistributed ground line 61GL, a redistributed signal line 61SL, afirst interconnection 61i′ and a second interconnection 61i″ may beprovided on the first dielectric layer 59. The redistributed power line61PL is electrically connected to the external power chip pad 55PPthrough a power via hole penetrating the first dielectric layer 59 andthe passivation layer 57. Similarly, the redistributed ground line 61GLis electrically connected to the external ground chip pad 55GG through aground via hole penetrating the first dielectric layer 59 and thepassivation layer 57. Further, the redistributed signal line 61SL iselectrically connected to the external signal chip pad 55SS through asignal via hole penetrating the first dielectric layer 59 andpassivation layer 57. Similarly, the first interconnection 61i′ iselectrically connected to the first internal chip pad 55i′ through afirst via hole penetrating the first dielectric layer 59 and thepassivation layer 57. Also similarly, the second interconnection 61i″ iselectrically connected to the second internal chip pad 55i″ through asecond via hole penetrating the first dielectric layer 59 and thepassivation layer 57.

The redistributed power line 61PL, the redistributed ground line 61GL,the redistributed signal line 61SL, the first interconnection 61i′, thesecond interconnection 61i″ and the first dielectric layer 59 inaccordance with some embodiments of the invention are covered with asecond dielectric layer 63. The second dielectric layer 63 can be thesame material layer as the first dielectric layer 59. A portion of theredistributed power line 61PL is exposed by a power via hole passingthrough the second dielectric layer 63 to serve as a power bonding pad61PP, and a portion of the redistributed ground line 61GL is exposed bya ground via hole passing through the second dielectric layer 63 toserve as a ground bonding pad 61GG. Further, a portion of theredistributed signal line 61SL is exposed by a signal via hole passingthrough the second dielectric layer 63 to serve as a signal bonding pad61SS. Similarly, a portion of the first interconnection 61i′ is exposedby a first via hole passing through the second dielectric layer 63 toserve as a first internal bonding pad 61II′ (IBP1′, IBP2′ or IBP3′ ofFIG. 1), and a portion of the second interconnection 61i″ is exposed bya second via hole passing through the second dielectric layer 63 toserve as a second internal bonding pad 61″ (IBP1″, IBP2″ or IBP3″ ofFIG. 1).

Those of skill in art will appreciate that alternative connections andexposures suitably can be used, as contemplated, within the spirit andscope of the invention. Similarly, alternative interconnection meanssuitably can be used. For example, flex circuit boards and/orthrough-hole solder junction posts or the like can be used, within thespirit and scope of the invention, to form the needed or desiredinterconnections.

The bonding pads 61PP, 61GG, 61SS, 61II′ and 61II″ advantageously aredisposed at desired positions regardless of positions of the chip pads55PP, 55GG, 55SS, 55i′ and 55i″. This is because of the presence of theredistributed power line 61PL, the redistributed ground line 61GL, theredistributed signal line 61SL, the first interconnection 61i′ and thesecond interconnection 61i″ described and illustrated herein as forminga part of the present invention.

In accordance with an alternative embodiment of the present invention,the redistributed power line 61PL, the redistributed ground line 61GL,the redistributed signal line 61SL, the first interconnection 61i′ andthe second interconnection 61i″ may not be provided, i.e., they areomitted. In this case, the chip pads 55PP, 55GG, 55SS, 55i′ and 55i″will be understood by those of skill in the art to act as bonding pads.

In accordance with yet another embodiment, the first and secondinterconnections 61i′ and 61i″ may extend to act as a redistributedinternal interconnection (61i of FIG. 1) electrically connecting thefirst internal bonding pad 61II′ to the second internal bonding pad61II″. Notwithstanding the presence of the redistributed internalinterconnection 61i, there nevertheless is a limitation by way of areduction in the electrical resistance of the redistributed internalinterconnection 61i. This is because the redistributed power line 61PL,the redistributed ground line 61GL and the redistributed signal line61SL occupy a wide area. That is, it may be difficult to efficiently layout the redistributed internal interconnection 61i together with theredistributed power line 61PL, the redistributed ground line 61GL andthe redistributed signal line 61SL. As a result, even though theinternal interconnections IL1, IL2 and IL3 and the redistributedinternal interconnections 61i are provided, there might be a practicallimitation in improving power delivery efficiency when conveying outputvoltages of the first, second and third internal power generators IPG1,IPG2 and IPG3 to the corresponding internal circuits.

The DRAM chip 100 can be mounted on a package board PB. The packageboard PB includes a board body 71 having a front surface 71FS and a backsurface 71BS. When the DRAM chip 100 is provided for a flip chippackage, the DRAM chip 100 is mounted on the package board PB so thatthe bonding pads 61PP, 61GG, 61SS, 61II′ and 61II″ face the frontsurface 71FS of the package board PB, as shown in FIG. 2.

A first power pad 73PP, a first ground pad 73GG, a first signal pad73SS, a first internal terminal pad 73i′ and a second internal terminalpad 73i″, which correspond to the bonding pads 61PP, 61GG, 61SS, 61II′and 61II″ respectively, are provided on the front surface 71FS. Theexternal power bonding pad 61PP, the external ground bonding pad 61GG,the external signal bonding pad 61SS, the first internal bonding pad61II′ and the second internal bonding pad 61II″ are electricallyconnected to the first power pad 73PP, the first ground pad 73GG, thefirst signal pad 73SS, the first internal terminal pad 73i′ and thesecond internal terminal pad 73i″ via an external power connector 65PP,an external ground connector 65GG, an external signal connector 65SS, afirst internal connector 65i′ and a second internal connector 65i″,respectively. When the DRAM chip 100 is a flip chip as described above,the connectors 65PP, 65GG, 65SS, 65i′ and 65i″ typically take the formof bumps, as shown in FIG. 2. The bumps, i.e., flip chip bumps, caninclude solder bumps or gold stud bumps. Those of skill in the art willappreciate that alternative embodiments are contemplated, such thatalternative interconnection schemes involving more or fewer of differentinterconnections and more or fewer or different terminal andintermediate connection pads, i.e., termini, are contemplated as beingwithin the spirit and scope of the invention,

The first power pad 73PP, the first ground pad 73GG, the first signalpad 73SS, the first internal terminal pad 73i′, the second internalterminal pad 73i″ and the front surface 71FS may be covered with a firstcoating layer 75 that comprises an insulating material. In this case,the solder bumps 65PP, 65GG, 65SS, 65i′ and 65i″ may be seen topenetrate the first coating layer 75, thereby to be in contact with thefirst power pad 73PP, the first ground pad 73GG, the first signal pad73SS, the first internal terminal pad 73i′ and the second internalterminal pad 73i″, respectively.

A second power pad 77PP, a second ground pad 77GG and a second signalpad 77SS are provided on the back surface 71BS. The second power pad77PP, the second ground pad 77GG, the second signal pad 77SS and theback surface 71BS may be covered with a second coating layer 79. Thesecond coating layer 79 may be of the same material layer as the firstcoating layer 75, although within the spirit and scope of the inventionit can be different. The second power pad 77PP, the second ground pad77GG and the second signal pad 77SS may be seen to be in contact with apower ball 85PP, a ground ball 85GG and a signal ball 85SS passingthrough the second coating layer 79, respectively.

The first power pad 73PP is electrically connected to the second powerpad 77PP via a first conductive line 83PP provided in a first hole 81PPpassing through the board body 71, and the first ground pad 73GG iselectrically connected to the second ground pad 77GG via a secondconductive line 83GG provided in a second hole 81GG passing through theboard body 71. Similarly, the first signal pad 73SS is electricallyconnected to the second signal pad 77SS via a third conductive line 83SSprovided in a third hole 81SS passing through the board body 71. Thoseof skill in the art will appreciate that these connections arecontemplated as being typical, although alternative connections arecontemplated as being within the spirit and scope of the invention.

An internal terminal interconnection 87i is provided in a bulk region ofthe board body 71. A first region of the internal terminalinterconnection 87i is electrically connected to the first internalterminal pad 73i′ via a first hole interconnection 83i′ provided in afirst interconnection hole 81i′ in the board body 71, and a secondregion of the internal terminal interconnection 87i is electricallyconnected to the second internal terminal pad 73i″ via a second holeinterconnection 83i″ provided in a second interconnection hole 81i″ inthe board body 71. As a result, the internal terminal interconnection87i electrically connects the first internal terminal pad 73i′ to thesecond internal terminal pad 73i″.

In another embodiment, the internal terminal interconnection 87i can beprovided on the surface of the board body 71. The internal terminalinterconnection 87i can correspond to any one of first, second and thirdinternal terminal interconnections IL1′, IL2′ and IL3′, whichelectrically connect the first internal bonding pads IBP1′, IBP2′ andIBP3′ (FIG. 1) to the second internal bonding pads IBP1″, IBP2″ andIBP3″, respectively.

The internal terminal interconnection 87i may be provided in the bulkregion of the board body 71 or on the surface thereof, as describedabove. As a result, the internal terminal interconnection 87i (providingat least first and second internal terminal pads 731′ and 73i″ thatdefine therebetween a so-called interconnection pitch or pitch size) canbe configured to provide a greater pitch size than that of any otherinterconnections in the DRAM chip 100. This is helpful because thenumber of the interconnections provided in the package board PBtypically is much less than the number of the interconnections disposedin the DRAM chip 100. In addition, the internal terminalinterconnections 87i may have a greater thickness than theinterconnections in the DRAM chip 100. Accordingly, the electricalresistance of the internal terminal interconnections 87i may besignificantly reduced relative to the electrical resistance of theinternal interconnections IL1, IL2 and IL3 and the redistributedinternal interconnection 61i.

A common power interconnection 87PP and a common ground interconnection87GG additionally are provided in the board body 71, in accordance withone embodiment of the invention. The common power interconnection 87PPis electrically connected to the first power pad 73PP via a firstconductive line 83PP, and the common ground interconnection 87GG iselectrically connected to the first ground pad 73GG via a secondconductive line 83GG. Alternatively, the common power interconnection87PP and the common ground interconnection 87GG may be provided on thesurface of the board body 71. The common power interconnection 87PP canbe electrically connected to other external power pads (not shown) ofthe DRAM chip 100, and the common ground interconnection 87GG can beelectrically connected to other external ground pads (not shown) of theDRAM chip 100. The internal terminal interconnection 87i can be disposedacross the common power interconnection 87PP (when viewed from a planview) and electrically insulated from the common power interconnection87PP. Similarly, the internal terminal interconnection 87i can bedisposed across the common ground interconnection 87GG (when viewed froma plan view) and electrically insulated from the common groundinterconnection 87GG.

According to some embodiments of the present invention as describedabove, internal terminal interconnections are provided in the packageboard or on the package board, and the internal terminalinterconnections are electrically connected to a first internal circuit,which may be electrically coupled to the first internal bonding pads61II′, and to a second internal circuit, which may be electricallycoupled to the second internal bonding pads 61II″, of a semiconductorchip mounted on the package board. Thus, it is possible to improve powerdelivery efficiency and/or signal delivery efficiency between the firstand second internal circuits.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present invention. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments.

It is further intended that any other embodiments of the presentinvention that result from any changes in application or method of useor operation, method of manufacture, shape, size, or material which arenot specified within the detailed written description or illustrationscontained herein yet are considered apparent or obvious to one skilledin the art are within the scope of the present invention.

Accordingly, while the present invention has been shown and describedwith reference to the foregoing embodiments of the invented apparatus,it will be apparent to those skilled in the art that other changes inform and detail may be made therein without departing from the spiritand scope of the invention as defined in the appended claims.

What is claimed is:
 1. A package board comprising: a board body having afront surface and a back surface; a first power pad, a first ground pad,a first signal pad, a first internal terminal pad and a second internalterminal pad disposed on the front surface of the board body; a secondpower pad, a second ground pad and a second signal pad disposed on theback surface of the board body, the second power pad, the second groundpad and the second signal pad being electrically connected to the firstpower pad, the first ground pad and the first signal pad, respectively;and an internal terminal interconnection disposed in a bulk region ofthe board body or on a surface of the board body to electrically connectthe first internal terminal pad to the second internal terminal pad,wherein the first internal terminal pad and the second internal terminalpad are electrically insulated from the first power pad, the firstground pad and the first signal pad.
 2. The package board according toclaim 1, further comprising a common power interconnection disposed inthe bulk region of the board body or on the surface of the board bodyand electrically connected to the first and second power pads.
 3. Thepackage board according to claim 2, wherein the internal terminalinterconnection is disposed across the common power interconnection andelectrically insulated from the common power interconnection.
 4. Thepackage board according to claim 1, further comprising a common groundinterconnection disposed in the bulk region of the board body or on thesurface of the board body and electrically connected to the first andsecond ground pads.
 5. The package board according to claim 4, whereinthe internal terminal interconnection is disposed across the commonground interconnection and electrically insulated from the common groundinterconnection.
 6. The package board according to claim 1, wherein thefirst power pad, the first ground pad and the first signal pad areelectrically connected to the second power pad, the second ground padand the second signal pad, respectively, through first, second and thirdholes penetrating the board body.
 7. The package board according toclaim 1, wherein the first internal terminal pad and the second internalterminal pad are directly connected to a first internal bonding pad anda second internal bonding pad of a semiconductor chip to be mounted onthe front surface of the board body.
 8. The package board according toclaim 2, wherein the internal terminal interconnection and the commonpower interconnection are electrically insulated from each other.
 9. Thepackage board according to claim 1, wherein the first internal terminalpad and the second internal terminal pad are only disposed on the frontsurface of the board body.
 10. A semiconductor package comprising: aboard body having a front surface and a back surface; a first power pad,a first ground pad, a first signal pad, a first internal terminal padand a second internal terminal pad disposed on the front surface of theboard body; a second power pad, a second ground pad and a second signalpad disposed on the back surface of the board body, the second powerpad, the second ground pad and the second signal pad being electricallyconnected to the first power pad, the first ground pad and the firstsignal pad, respectively; a power ball, a ground ball and a signal ballthat are in contact with the second power pad, the second ground pad andthe second signal pad, respectively; an internal terminalinterconnection disposed in a bulk region of the board body or on asurface of the board body to electrically connect the first internalterminal pad to the second internal terminal pad; a semiconductor chipmounted on the front surface of the board body, the semiconductor chiphaving an external power bonding pad, an external ground bonding pad, anexternal signal bonding pad, a first internal bonding pad and a secondinternal bonding pad; and an external power connector, an externalground connector, an external signal connector, a first internalconnector and a second internal connector electrically connecting thefirst power pad, the first ground pad, the first signal pad, the firstinternal terminal pad and the second internal terminal pad to theexternal power bonding pad, the external ground bonding pad, theexternal signal bonding pad, the first internal bonding pad and thesecond internal bonding pad, respectively, wherein the first internalterminal pad and the second internal terminal pad are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad.
 11. The package according to claim 10, further comprising acommon power interconnection disposed in the bulk region of the boardbody or on the surface of the board body and electrically connected tothe first and second power pads.
 12. The package according to claim 10,further comprising a common ground interconnection disposed in the bulkregion of the board body or on the surface of the board body andelectrically connected to the first and second ground pads.
 13. Thepackage according to claim 10, wherein the first power pad, the firstground pad and the first signal pad are electrically connected to thesecond power pad, the second ground pad and the second signal pad,respectively, through first, second and third holes penetrating theboard body.
 14. The package according to claim 10, wherein the firstinternal bonding pad is electrically connected to an output terminal ofan internal power generator of the semiconductor chip, and wherein thesecond internal bonding pad is electrically connected to a powerterminal of any one of one or more internal circuits of thesemiconductor chip.
 15. The package according to claim 10, wherein thesemiconductor chip is a flip chip.
 16. The package according to claim15, wherein the external power connector, the external ground connector,the external signal connector, the first internal connector and thesecond internal connector are flip chip bumps.
 17. The semiconductorpackage according to claim 11, wherein the first internal connector andthe second internal connector are electrically insulated from the commonpower interconnection.
 18. A semiconductor package comprising: a boardbody having a front surface and a back surface; a first power pad, afirst ground pad, a first signal pad, a first internal terminal pad anda second internal terminal pad disposed on the front surface of theboard body; a second power pad, a second ground pad and a second signalpad disposed on the back surface of the board body, the second powerpad, the second ground pad and the second signal pad being electricallyconnected to the first power pad, the first ground pad and the firstsignal pad, respectively; a power ball, a ground ball and a signal ballthat are in contact with the second power pad, the second ground pad andthe second signal pad, respectively; an internal terminalinterconnection disposed in a bulk region of the board body or on asurface of the board body to electrically connect the first internalterminal pad to the second internal terminal pad; a semiconductor chipmounted on the front surface of the board body, the semiconductor chiphaving an external power bonding pad, an external ground bonding pad, anexternal signal bonding pad, a first internal bonding pad and a secondinternal bonding pad; and an external power connector, an externalground connector, an external signal connector, a first internalconnector and a second internal connector electrically connecting thefirst power pad, the first ground pad, the first signal pad, the firstinternal terminal pad and the second internal terminal pad to theexternal power bonding pad, the external ground bonding pad, theexternal signal bonding pad, the first internal bonding pad and thesecond internal bonding pad, respectively, wherein the semiconductorchip comprises: a semiconductor substrate; internal circuits formed atthe semiconductor substrate; an insulating layer covering the internalcircuits and the semiconductor substrate; an external power chip pad, anexternal ground chip pad, an external signal chip pad, a first internalchip pad and a second internal chip pad disposed on the insulating layerand electrically connected to the internal circuits; a dielectric layercovering the insulating layer and the chip pads; and a power line, aground line, a signal line, a first interconnection and a secondinterconnection redistributed on the dielectric layer and electricallyconnected to the external power chip pad, the external ground chip pad,the external signal chip pad, the first internal chip pad and the secondinternal chip pad, respectively, wherein a portion of the redistributedpower line, a portion of the redistributed ground line, a portion of theredistributed signal line, a portion of the first interconnection and aportion of the second interconnection correspond to the external powerbonding pad, the external ground bonding pad, the external signalbonding pad, the first internal bonding pad and the second internalbonding pad, respectively.
 19. The package according to claim 18,further comprising an internal interconnection disposed on or in theinsulating layer, wherein the internal interconnection electricallyconnects the first internal chip pad to the second internal chip pad.20. The package according to claim 18, wherein the one or more internalcircuits are configured as a DRAM circuit.
 21. The package according toclaim 20, wherein the DRAM circuit comprises a well bias circuit, a highvoltage generator and a plate electrode voltage generator.
 22. Thepackage according to claim 21, wherein one of the first internal chippad and the second internal chip pad is electrically connected to anoutput terminal of any one of the well bias circuit, the high voltagegenerator and the plate electrode voltage generator.
 23. The packageaccording to claim 18, further comprising a redistributed internalinterconnection provided on the dielectric layer to electrically connectthe first internal bonding pad to the second internal bonding pad.
 24. Asemiconductor package comprising: a package board comprising: a boardbody having a front surface and a back surface; a first power pad, afirst ground pad, a first signal pad, and at least three internalterminal pads disposed on the front surface of the board body, the atleast three internal terminal pads being configured to provide aninternal power delivery function; a second power pad, a second groundpad and a second signal pad disposed on the back surface of the boardbody, the second power pad, the second ground pad and the second signalpad being electrically connected to the first power pad, the firstground pad and the first signal pad, respectively; and an internalterminal interconnection disposed in a bulk region of the board body oron the front surface of the board body to electrically connect the atleast three internal terminal pads; and a semiconductor chip mounted onthe package board and including an internal power generator and aninternal circuit, wherein: the at least three internal terminal pads areelectrically insulated from remaining pads configured to provide afunction other than the internal power delivery function, the remainingpads including the first power pad, the first ground pad, the firstsignal pad, the second power pad, the second ground pad and the secondsignal pad, the internal terminal interconnection is connected to thesemiconductor chip through the at least three internal terminal pads,one of the at least three internal terminal pads is electricallyconnected to an output terminal of the internal power generator, anotherof the at least three internal terminal pads is electrically connectedto a power terminal of the internal circuit, the internal terminalinterconnection is not electrically connected with conductive elementsdisposed on the back surface of the board body, the semiconductor chipfurther comprises an internal interconnection electrically connectingthe output terminal of the internal power generator and the powerterminal of the internal circuit through a path fully within thesemiconductor chip, and a thickness of the internal terminalinterconnection is greater than a thickness of the internalinterconnection.
 25. The semiconductor package of claim 24, wherein theinternal terminal interconnection is physically connected to thesemiconductor chip through the at least three internal terminal pads.26. The semiconductor package of claim 24, wherein the at least threeinternal terminal pads are electrically connected to at least threeinternal bonding pads of the semiconductor chip.
 27. The semiconductorpackage of claim 24, wherein the at least three internal terminal padsare disposed only on the front surface of the board body.
 28. Thesemiconductor package of claim 24, wherein the internal terminalinterconnection is configured to receive internal power from theinternal power generator in the semiconductor chip.
 29. Thesemiconductor package of claim 24, further comprising: a firstconductive line straightly passing through the board body to connect thefirst power pad to the second power pad; a second conductive linestraightly passing through the board body to connect the first groundpad to the second ground pad; and a third conductive line straightlypassing through the board body to connect the first signal pad to thesecond signal pad.
 30. The semiconductor package of claim 24, whereinthe internal terminal interconnection does not encircle any of the atleast three internal terminal pads.
 31. The semiconductor package ofclaim 24, wherein the internal terminal interconnection does not have aspiral geometry.
 32. The semiconductor package of claim 24, wherein theinternal terminal interconnection does not operate as an inductor. 33.The semiconductor package of claim 24, wherein the internal terminalinterconnection circumvents other conductive structures when connectingbetween the at least three internal terminal pads.
 34. A semiconductorpackage comprising: a package board comprising: a board body having afront surface and a back surface; a first power pad, a first ground pad,a first signal pad, and at least three internal terminal pads disposedon the front surface of the board body, the at least three internalterminal pads that include a first internal terminal pad and a secondinternal terminal pad being configured to provide an internal powerdelivery function; a second power pad, a second ground pad and a secondsignal pad disposed on the back surface of the board body, the secondpower pad, the second ground pad and the second signal pad beingelectrically connected to the first power pad, the first ground pad andthe first signal pad, respectively; and an internal terminalinterconnection disposed in a bulk region of the board body or on thefront surface of the board body to electrically connect the firstinternal terminal pad to the second internal terminal pad; and asemiconductor chip mounted on the package board and including aninternal power generator and an internal circuit, wherein: the at leastthree internal terminal pads are electrically insulated from the firstpower pad, the first ground pad and the first signal pad, the internalterminal interconnection is connected to the semiconductor chip throughthe at least three internal terminal pads, the internal terminalinterconnection is not electrically connected with conductive elementsdisposed on the back surface of the board body, the at least threeinternal terminal pads include a first internal terminal pad and asecond internal terminal pad, the first internal terminal pad iselectrically connected to an output terminal of the internal powergenerator, the second internal terminal pad is electrically connected toa power terminal of the internal circuit, the internal terminalinterconnection does not operate as an inductor, the semiconductor chipfurther comprises an internal interconnection electrically connectingthe output terminal of the internal power generator and the powerterminal of the internal circuit through a path fully within thesemiconductor chip, and a thickness of the internal terminalinterconnection is greater than a thickness of the internalinterconnection.
 35. The semiconductor package of claim 34, wherein theinternal terminal interconnection is configured to receive internalpower from the internal power generator.
 36. The semiconductor packageof claim 34, wherein the internal terminal interconnection does notencircle any of the at least three internal terminal pads.
 37. Thesemiconductor package of claim 34, wherein the internal terminalinterconnection does not have a spiral geometry.
 38. The semiconductorpackage of claim 34, wherein the internal terminal interconnectioncircumvents other conductive structures when connecting between the atleast three internal terminal pads.
 39. A semiconductor devicecomprising: a package board comprising: a board body having a frontsurface and a back surface; a first power pad, a first ground pad, afirst signal pad, and at least three internal terminal pads disposed onthe front surface of the board body; a second power pad, a second groundpad and a second signal pad disposed on the back surface of the boardbody, the second power pad, the second ground pad and the second signalpad being electrically connected to the first power pad, the firstground pad and the first signal pad, respectively; and an internalterminal interconnection disposed in a bulk region of the board body oron the front surface of the board body to electrically connect the atleast three internal terminal pads, the at least three internal terminalpads being electrically insulated from the first power pad, the firstground pad and the first signal pad; and a semiconductor chip mounted onthe package board and including an internal power generator and aninternal circuit, wherein: the internal terminal interconnection isconnected to the semiconductor chip through the at least three internalterminal pads; and the internal terminal interconnection is notelectrically connected with conductive elements disposed on the backsurface of the board body, the internal terminal interconnection doesnot encircle any of the at least three internal terminal pads, a powerterminal of the internal circuit is electrically connected to one of theat least three internal terminal pads, the internal power generator iselectrically connected to another of the at least three internalterminal pads, the internal power generator outputs an internal powervoltage through an output terminal which is applied to the internalcircuit, the internal terminal interconnection does not have a spiralgeometry, the semiconductor chip further comprises an internalinterconnection electrically connecting the output terminal of theinternal power generator and the power terminal of the internal circuitthrough a path fully within the semiconductor chip, and a thickness ofthe internal terminal interconnection is greater than a thickness of theinternal interconnection.
 40. The semiconductor device of claim 39,wherein the internal terminal interconnection does not operate as aninductor.
 41. The semiconductor device of claim 39, wherein the internalterminal interconnection circumvents other conductive structures whenconnecting between the at least three internal terminal pads.
 42. Thesemiconductor device of claim 39, wherein the internal terminalinterconnection does not have any shielding lines extending in parallelwith the internal terminal interconnection.
 43. The semiconductor deviceof claim 39, wherein the internal terminal interconnection horizontallyextends to directly connect one of the at least three internal terminalpads with another of the at least three internal terminal pads.
 44. Thesemiconductor device of claim 39, wherein no interconnections are sidesof the internal terminal interconnection between one of the at leastthree internal terminal pads and another of the at least three internalterminal pads so that the internal terminal interconnection has a singleline.
 45. The semiconductor device of claim 39, further comprising: acommon ground interconnection disposed in the bulk region of the boardbody and electrically connected to the first and second ground pads,wherein the internal terminal interconnection is disposed at a leveldifferent than the common ground interconnection so that the frontsurface of the board body is closer to the internal terminalinterconnection than the common ground interconnection.
 46. Asemiconductor package comprising: a package board including: a boardbody having a front surface and a back surface; a first power pad, afirst ground pad, a first signal pad, a first internal terminal pad anda second internal terminal pad disposed on the front surface of theboard body, the first and second internal terminal pads being configuredto provide an internal power delivery function; a second power pad, asecond ground pad and a second signal pad disposed on the back surfaceof the board body, the second power pad, the second ground pad and thesecond signal pad being electrically connected to the first power pad,the first ground pad and the first signal pad, respectively; and aninternal terminal interconnection disposed in a bulk region of the boardbody or on the front surface of the board body to electrically connectthe first internal terminal pad and the second internal terminal pad;and a semiconductor chip mounted on the package board, and including aninternal power generator, an internal circuit, a first internal chip padand a second internal chip pad, wherein: the first internal terminal padis electrically connected to the first internal chip pad, the secondinternal terminal pad is electrically connected to the second internalchip pad, the first and second internal terminal pads are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad, the first internal chip pad is electrically connected to anoutput terminal of the internal power generator, the second internalchip pad is electrically connected to a power terminal of the internalcircuit, the semiconductor chip further comprises an internalinterconnection electrically connecting the output terminal of theinternal power generator and the power terminal of the internal circuitthrough a path fully within the semiconductor chip, and a thickness ofthe internal terminal interconnection is greater than a thickness of theinternal interconnection.
 47. The semiconductor package of claim 46,wherein the semiconductor package includes a flash memory.
 48. Thesemiconductor package of claim 46, wherein the internal terminalinterconnection is not electrically connected with conductive elementsdisposed on the back surface of the board body.
 49. The semiconductorpackage of claim 46, wherein the internal terminal interconnection doesnot have a spiral geometry.
 50. The semiconductor package of claim 46,wherein the internal terminal interconnection does not operate as aninductor.
 51. The semiconductor package of claim 46, wherein theinternal terminal interconnection circumvents other conductivestructures when connecting between the first internal terminal pad andthe second internal terminal pad.
 52. The semiconductor package of claim46, wherein the internal terminal interconnection does not encircle thefirst and second internal terminal pads.
 53. A semiconductor packagecomprising: a package board including: a board body having a frontsurface and a back surface; a first power pad, a first ground pad, afirst signal pad, a first internal terminal pad and a second internalterminal pad disposed on the front surface of the board body, the firstand second internal terminal pads being configured to provide aninternal power delivery function; a second power pad, a second groundpad and a second signal pad disposed on the back surface of the boardbody, the second power pad, the second ground pad and the second signalpad being electrically connected to the first power pad, the firstground pad and the first signal pad, respectively; and an internalterminal interconnection disposed in a bulk region of the board body oron the front surface of the board body to electrically connect the firstinternal terminal pad and the second internal terminal pad; and asemiconductor chip mounted on the package board, and including aninternal power generator, an internal circuit, a first internal chip padand a second internal chip pad, wherein: the first internal terminal padis electrically connected to the first internal chip pad, the secondinternal terminal pad is electrically connected to the second internalchip pad, the first internal chip pad is electrically connected to anoutput terminal of the internal power generator, the second internalchip pad is electrically connected to a power terminal of the internalcircuit, the first and second internal terminal pads are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad, the internal terminal interconnection is not electricallyconnected with conductive elements disposed on the back surface of theboard body, the semiconductor chip further comprises an internalinterconnection electrically connecting the output terminal of theinternal power generator and the power terminal of the internal circuitthrough a path fully within the semiconductor chip, and a thickness ofthe internal terminal interconnection is greater than a thickness of theinternal interconnection.
 54. The semiconductor package of claim 53,wherein the semiconductor package includes a flash memory.
 55. Thesemiconductor package of claim 53, wherein the internal terminalinterconnection does not have a spiral geometry.
 56. The semiconductorpackage of claim 53, wherein the internal terminal interconnection doesnot operate as an inductor.
 57. The semiconductor package of claim 53,wherein the internal terminal interconnection circumvents otherconductive structures when connecting between the first internalterminal pad and the second internal terminal pad.
 58. The semiconductorpackage of claim 53, wherein the internal terminal interconnection doesnot encircle the first and second internal terminal pads.
 59. Asemiconductor package comprising: a package board including: a boardbody having a front surface and a back surface; a first power pad, afirst ground pad, a first signal pad, a first internal terminal pad anda second internal terminal pad disposed on the front surface of theboard body, the first and second internal terminal pads being configuredto provide an internal power delivery function; a second power pad, asecond ground pad and a second signal pad disposed on the back surfaceof the board body, the second power pad, the second ground pad and thesecond signal pad being electrically connected to the first power pad,the first ground pad and the first signal pad, respectively; and aninternal terminal interconnection disposed in a bulk region of the boardbody or on the front surface of the board body to electrically connectthe first internal terminal pad and the second internal terminal pad;and a semiconductor chip mounted on the package board, and including aninternal power generator, an internal circuit, a first internal chip padand a second internal chip pad, wherein: the first internal terminal padis electrically connected to the first internal chip pad, the secondinternal terminal pad is electrically connected to the second internalchip pad, the first and second internal terminal pads are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad, the first internal chip pad is electrically connected to anoutput terminal of the internal power generator, and the second internalchip pad is electrically connected to a power terminal of the internalcircuit, the internal power generator outputs an internal power voltagewhich is applied to the internal circuit, the internal terminalinterconnection does not have a spiral geometry, the semiconductor chipfurther comprises an internal interconnection electrically connectingthe output terminal of the internal power generator and the powerterminal of the internal circuit through a path fully within thesemiconductor chip; and a thickness of the internal terminalinterconnection is greater than a thickness of the internalinterconnection.
 60. The semiconductor package of claim 59, wherein thesemiconductor package includes a flash memory.
 61. The semiconductorpackage of claim 59, wherein the internal terminal interconnection doesnot operate as an inductor.
 62. The semiconductor package of claim 59,wherein the internal terminal interconnection circumvents otherconductive structures when connecting between the first internalterminal pad and the second internal terminal pad.
 63. The semiconductorpackage of claim 59, wherein the internal terminal interconnection doesnot encircle the first and second internal terminal pads.
 64. Asemiconductor device comprising: a package board including: a board bodyhaving a front surface and a back surface; a first power pad, a firstground pad, a first signal pad, a first internal terminal pad and asecond internal terminal pad disposed on the front surface of the boardbody, the first and second internal terminal pads being configured toprovide an internal power delivery function; a second power pad, asecond ground pad and a second signal pad disposed on the back surfaceof the board body, the second power pad, the second ground pad and thesecond signal pad being electrically connected to the first power pad,the first ground pad and the first signal pad, respectively; and aninternal terminal interconnection disposed in a bulk region of the boardbody or on the front surface of the board body to electrically connectthe first internal terminal pad and the second internal terminal pad;and a semiconductor chip mounted on the package board, and including afirst internal power generator, a second internal power generator, afirst internal circuit, a second internal circuit, a first internal chippad and a second internal chip pad, wherein: the first internal terminalpad is electrically connected to the first internal chip pad, the secondinternal terminal pad is electrically connected to the second internalchip pad, the first and second internal terminal pads are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad, the first internal chip pad is electrically connected to anoutput terminal of the first internal power generator, the secondinternal chip pad is electrically connected to an output terminal of thesecond internal power generator, the output terminal of the firstinternal power generator is electrically connected to a power terminalof the first internal circuit, the output terminal of the secondinternal power generator is electrically connected to a power terminalof the second internal circuit, the semiconductor chip further comprisesa first internal interconnection electrically connecting the outputterminal of the first internal power generator and the power terminal ofthe first internal circuit through a path fully within the semiconductorchip, the semiconductor chip further comprises a second internalinterconnection electrically connecting the output terminal of thesecond internal power generator and the power terminal of the secondinternal circuit through a path fully within the semiconductor chip, anda thickness of the internal terminal interconnection is greater than athickness of the first and second internal interconnections.
 65. Thesemiconductor device of claim 64, further comprising a flash memory. 66.The semiconductor device of claim 64, wherein the internal terminalinterconnection is not electrically connected with conductive elementsdisposed on the back surface of the board body.
 67. The semiconductordevice of claim 64, wherein the internal terminal interconnection doesnot have a spiral geometry.
 68. The semiconductor device of claim 64,wherein the internal terminal interconnection does not operate as aninductor.
 69. The semiconductor device of claim 64, wherein the internalterminal interconnection circumvents other conductive structures whenconnecting between the first internal terminal pad and the secondinternal terminal pad.
 70. The semiconductor device of claim 64, whereinthe internal terminal interconnection does not encircle the first andsecond internal terminal pads.
 71. The semiconductor device of claim 64,wherein the first and second internal terminal pads are electricallyinsulated from the first power pad, the first ground pad and the firstsignal pad.
 72. The semiconductor device of claim 64, wherein theinternal terminal interconnection does not have any shielding linesextending in parallel with the internal terminal interconnection.